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      DCA55 DCA-55 SEMICONDUCTOR ANALYZER PEAK ATLAS
      DCA55 DCA-55 SEMICONDUCTOR ANALYZER PEAK ATLAS

      DCA55 DCA-55 SEMICONDUCTOR ANALYZER PEAK ATLAS

      $78.39
      Tax Excluded
      *Ships in 1-2 business days - Net price without VAT and shipping cost, VAT amount, and Shipping cost vary and the amount will be calculated during checkout depending on the final destination - Volume pricing depends on stock availability*
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      Connect any way round to automatically identify and measure a wide range of semiconductor devices. The DCA55 will automatically identify the type of the part, pinout and many component parameters. Components supported include bipolar NPN/PNP transistors, darlingtons, diode-protected transistors, transistors with built-in resistors, enhancement mode MOSFETs, depletion mode MOSFETs, diodes, diode networks, LEDs, 2 and 3 lead bicolour LEDs, JFETs and many more. Further measurements are displayed including transistor gain, leakage current, pn voltage drops, LED voltages, MOSFET threshold voltages and much more. Even if you don't know anything about the part, just connect it in any configuration and the DCA55 will identify the type of part for you and also identify all the leads. Supplied with universal gold plated hook probes, battery and illustrated user guide. Not designed for in-circuit testing.

      Key Features:

      • Automatic pinout detection and identification, connect any way round.
      • Automatic part type identification.
      • Supports semiconductors including transistors, MOSFETs, diodes, LEDs, JFETs and much more.
      • Detection of special component features such as transistors with diodes or transistors with built-in resistors.
      • Transistor gain measurement.
      • Transistor leakage measurement.
      • MOSFET gate threshold measurement.
      • Semiconductor voltage drop measurement.
      • Supplied with gold plated red/green/blue universal hook probes on 160mm flexible leads.
      • Clear backlit display.
      • Powered by single alkaline AAA cell (included).

      Parameter

      Min

      Typ

      Max

      Note

      Bipolar Junction Transistors

      Measurable gain range (hFE)

      4

       

      20000

      2

      Gain resolution

       

      1 hFE

      2 hFE

      2,8

      Gain accuracy

      ±3% ±4 hFE

      2,8

      Gain jitter (3σ)

       

      ±0.2%

       

      2,9

      Gain test voltage VCEO

      2.0V

       

      3.0V

      2

      Gain test collector current IC

      2.50mA ±5%

      2

      Measurable VBE range

      0V

       

      1.80V

       

      VBE resolution

       

      1mV

      2mV

      8

      VBE accuracy

      ±2% ±4mV

       

      Darlington VBE range

      0.95V

      1.00V

      1.80V

      3

      Darlington VBE range (shunted)

      0.75V

      0.80V

      1.80V

      4

      Ge VBE range (ICLEAK<10μA)

      0V

       

      0.50V

       

      Ge VBE range (ICLEAK>10μA)

      0V

       

      0.55V

       

      Base-emitter shunt threshold

      50kW

      60kW

      70kW

       

      Collector leakage test voltage

      3.0V

      4.0V

      5.1V

       

      Collector leakage range

      0.010mA

       

      1.750mA

       

      Collector leakage resolution

       

      1μA

      2μA

       

      Collector leakage accuracy

      ±2% ±4μA

       

      Si Acceptable leakage

      0mA

       

      0.2mA

      6

      Ge Acceptable leakage

      0mA

       

      1.75mA

      6

      MOSFETs

      Gate threshold range

      0.1V

       

      5.0V

      5

      Gate threshold accuracy

      ±2% ±20mV

      5

      Gate threshold drain current

      2.50mA ±5%

       

      Min. gate-source resistance

       

      8kW

       

       

      Depletion drain test current

      0.5mA

       

      5.5mA

       

      Diodes/LEDs

      Diode test current

       

       

      5.0mA

       

      VF resolution

       

      1mV

      2mV

       

      VF accuracy

      ±2% ±4mV

       

      VF for LED identification

      1.50V

       

      4.00V

       

       

      Parameter

      Min

      Typ

      Max

      Note

      JFETs

      Drain-source test current

      0.5mA

       

      5.5mA

       

      SCRs/Triacs

      Gate test current

       

      4.5mA

       

      7

      Load test current

       

      5.0mA

       

       

      General Specifications

      Peak test current into S/C

      -5.5mA

       

      5.5mA

      1

      Peak test voltage across O/C

      -5.1V

       

      5.1V

      1

      Short circuit threshold

      5W

      10W

      15W

       

      Analysis duration

      1 Sec

      3 Secs

      6 Secs

       

      Battery voltage range (AAA)

      1.0V

      1.5V

      1.6V

       

      Battery voltage range (GP23)

      8.0V

      12V

       

       

      Inactivity power-down period

       

      60 Secs

       

       

      Operating temperature range

      10°C

       

      40°C

      10

       

      50°F

       

      104°F

      10

      Battery warning threshold

      1.1V (AAA Ver), 9.0V (GP23 Ver)

       

      Dimensions (body)

      103 x 70 x 20 mm

       

       

      4.1" x 2.8" x 0.8"

       

       

      Notes:


      1.   Between any pair of test clips.
      2.
         Collector current of 2.50mA and hFE2000.
      3.
         Resistance across reverse biased base-emitter > 60kW.
      4.
         Resistance across reverse biased base-emitter < 60kW.
      5.
         Drain-source current of 2.50mA.
      6.
         VCE=4.0V±1.0V. Base automatically tied to emitter with 910kW to reduce pickup.
      7.
         Thyristor quadrant I, Triac quadrants I and III.
      8.   
      BJT with no shunt resistors.
      9.
         Tested for Si BJT with hFE=1500.
      10.   Subject to acceptable LCD visibility.

      Dimensions per product (excluding leads) 103 x 70 x 20 mm (4.1" x 2.8" x 0.8")
      Dimensions per product (packaged) 200 x 138 x 30 mm (7.9" x 5.5" x 1.2")
         
      Weight per product (nett) 0.098kg (3.5oz)
      Weight per product (packaged inc docs) 0.166kg (5.9oz)
         
      Bulk order multiple 20, 80
         
      Harmonisation / Commodity / Tariff Code 9030 8200 00 GB
         
      Fundamental Materials Plastic, glass and metal.
         
      Country of manufacture England (UK)
         
      Certification CE, WEEE, ROHS

      50825.M5
      1 Item

      Specific References

      New

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